February 26, 2010





Unit - 1

A review of Microelectronics and an introduction to MOS Technology. Introduction to IC technology, the IC era, metal oxide semi conductor (MOS) and related VLSI technology. Basic MOS transistors, MOS characterization, enhancement mode transistor action, depletion mode action, MOS fabrication. CMOS fabrication, thermal aspects of processing Bi CMOS technology

7 Hours

Unit - 2

Basic electrical properties of MOS and BiCMOS circuits, Drain to source current IDS verses voltage VDS relationship, aspects of MOS transistor threshold voltage Vt, MOS transistor transconductance Gm and output conductance Gds.

6 Hours

Unit - 3

The pass transistor, the nMOS inverter, determination of pull up to down ratio (Zpu / Z pd) for an nMOS inverter driven by another nMOS inverter, alternative forms of pull up. The CMOS inverter, MOS transistor circuit model, some characteristics or NPN bipolar transistor, latch up in CMOS circuits, BiCMOS latch up susceptibility.

7 Hours

Unit - 4

MOS and BiCMOS circuit design process: MOS layers, stick diagram, design rules and layout, general observations on the design rules. 2.5μm double metal double poly CMOS rules, 1.2μm double metal single poly CMOS rules, layout diagrams, a brief introduction to symbolic diagrams, translation to mask form.

6 Hours

Part - B

Unit - 5

Basic circuit concepts: sheer resistance R, sheet resistance concept applied to MOS transistor and inverter, area capacitances of layers, standard unit of capacitance Cg, some area capacitance calculation, the delay unit τ, inverter delays, driving large capacitance loads, propagation delays, wiring capacitance, choice of layers.

7 Hours

Unit - 6

Scaling of MOS circuits: Scaling models and scaling factors for device parameters, some discussions on scaling and limitations of scaling, subsystem design and layout. Some architectural issues, switch logic gate restoring logic. Examples of structured design

6 Hours

Unit - 7

Subsystem design process: Some general considerations. An illustration of design processes, computational elements. Some observations on the design process, regularity, design of an ALU subsystem.

7 Hours

Unit - 8

Practical aspects and testability: Some thought on the performance, further thoughts on floor plans/layout, input /output pads, thoughts of system delay, ground rules for successful design, CAD tools for design and simulation, aspects of design tools, test and testability.

6 Hours

Text books:

  1. Basic VLSI design- Dougles A Pucknell, 3rd edition, PHI
  2. Principles of C MOS VLSI design-Neil West and Eshranghian, 2nd edition, Addison Wesley, 2002.

Reference Books:

1. Introduction to VLSI system – Mead & Conway, Addison Wesley, 1980

2. CMOS circuit design layout and simulation-Jacob Baker, Li & Boyce, PHI 1999.

3. Modern VLSI design- Warne Wolf, Pearson Education, 2000.

4. VLSI design technologies for Analog & Digital circuits- Gieger Allen Strader, McGraw Hill.



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