B.E/B.Tech DEGREE EXAMINATION APRIL/MAY 2008
Eighth Semester
(Regulation 2004)
Electrical and Electronics Engineering
EC 1461 -- VLSI DESIGN
Time: 3 hours Maximum marks: 100
Answer ALL questions
PART A (10 x 2 =20 marks)
1. Compare enhancement and depletion modes of operation.
2. what is problem latch-up?
3. Define a super buffer.
4. Write down the pull-up to pull down ratio required for an nMOS inverter driven through one or more pass transistors.
5. What are the differences between static and dynamic memory cells?
6. What are the applications of Tally circuits?
7. Distinguish between PLA and PAL.
8. Compare PLD and FPGA.
9. Write the entity of a full adder.
10. What are the logical and relational operators available in VHDL?
PART B (5 x 16 = 80)
11 (a) (i) Explain with neat diagrams the n-well process of CMOS fabrication. (10)
(ii) Outline the major steps involved in nMOS fabrication. (6)
(or)
(b) (i) Derive equations for the drain to source current of an nMOS transister in the nonsaturated and saturated regions of operation. (12)
(ii) Draw and discuss the MOS transistor models. (4)
12. (a) (i) Derive the pull up to pull down ratio required for an nMOS inverter driven by another nMOS inverter. (8)
(ii) Draw and explain with necessary layouts the different types of contacts cuts. (8)
(or)
(b) (i) Draw and explain the stick and layout diagrams of a two input nMOS NAND gate. (8)
(ii) Give a brief account of BiCMOS and steering logic. (8)
13 (a) (i) Discuss the structured design approach for a parity generator. Draw and explain the stick diagrams for both nMOS and CMOS implimentations. (8)
(ii) Write a brief note on dynamic technology. (8)
(or)
(b) (i) Draw and explain with necessary stick diagram the design of a four way nMOS multiplexer.(8)
(ii) Discuss the operation of a 4 * 4 barrel shifter. (8)
14. (a) (i) Draw an NMOS based PLA arrangement and illustrate how it can be used to implement multiple output functions of n variables in SOP form. (8)
(ii) Explain the EPROM and EEPROM technology with necessary diagrams. (8)
(or)
(b) Explain the salient features of a field programmable gate array? Clearly bring out the architectural aspects, interconnect, logic and I/O details with suitable diagrams. (16)
15. (a) (i) Explain the syntax details of a VHDL subprogram. Write a VHDL subprogram to perform binary integer conversion. (8)
(ii) Explain the application of packages in VHDL with a suitable example. (8)
(or)
(b) (i) Write a VHDL description of a test bench for a D flip flop. (8)
(ii) Explain the modeling of a sequential circuit using VHDL. (8)
Eighth Semester
(Regulation 2004)
Electrical and Electronics Engineering
EC 1461 -- VLSI DESIGN
Time: 3 hours Maximum marks: 100
Answer ALL questions
PART A (10 x 2 =20 marks)
1. Compare enhancement and depletion modes of operation.
2. what is problem latch-up?
3. Define a super buffer.
4. Write down the pull-up to pull down ratio required for an nMOS inverter driven through one or more pass transistors.
5. What are the differences between static and dynamic memory cells?
6. What are the applications of Tally circuits?
7. Distinguish between PLA and PAL.
8. Compare PLD and FPGA.
9. Write the entity of a full adder.
10. What are the logical and relational operators available in VHDL?
PART B (5 x 16 = 80)
11 (a) (i) Explain with neat diagrams the n-well process of CMOS fabrication. (10)
(ii) Outline the major steps involved in nMOS fabrication. (6)
(or)
(b) (i) Derive equations for the drain to source current of an nMOS transister in the nonsaturated and saturated regions of operation. (12)
(ii) Draw and discuss the MOS transistor models. (4)
12. (a) (i) Derive the pull up to pull down ratio required for an nMOS inverter driven by another nMOS inverter. (8)
(ii) Draw and explain with necessary layouts the different types of contacts cuts. (8)
(or)
(b) (i) Draw and explain the stick and layout diagrams of a two input nMOS NAND gate. (8)
(ii) Give a brief account of BiCMOS and steering logic. (8)
13 (a) (i) Discuss the structured design approach for a parity generator. Draw and explain the stick diagrams for both nMOS and CMOS implimentations. (8)
(ii) Write a brief note on dynamic technology. (8)
(or)
(b) (i) Draw and explain with necessary stick diagram the design of a four way nMOS multiplexer.(8)
(ii) Discuss the operation of a 4 * 4 barrel shifter. (8)
14. (a) (i) Draw an NMOS based PLA arrangement and illustrate how it can be used to implement multiple output functions of n variables in SOP form. (8)
(ii) Explain the EPROM and EEPROM technology with necessary diagrams. (8)
(or)
(b) Explain the salient features of a field programmable gate array? Clearly bring out the architectural aspects, interconnect, logic and I/O details with suitable diagrams. (16)
15. (a) (i) Explain the syntax details of a VHDL subprogram. Write a VHDL subprogram to perform binary integer conversion. (8)
(ii) Explain the application of packages in VHDL with a suitable example. (8)
(or)
(b) (i) Write a VHDL description of a test bench for a D flip flop. (8)
(ii) Explain the modeling of a sequential circuit using VHDL. (8)
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